mbt6517lt1 n p n e p i t a x i a l s i l i c o n t r a n s i s t o r high vol t a ge transist o r * collector dissipation: pc= 225mw ( t a = 2 5 ) * collector-emitter v o ltage :vceo= 350v absolute maximum ra tings at t a =25 ch aracteristic sy mb o l ratin g collector-base v o ltage vcbo 350 v collector-emitter v o ltage vceo 350 v emitter-base v o ltage v ebo 6 v collector current ic 500 ma base current ib 250 ma collector dissipation t a =25 * p d 225 mw junction t e mperature t j 150 storage t e mperature t s tg -55-150 1 . ba se 2 . e m i tte r 3. c o l le c t o r 1. 1. 3 2. 4 2 . 9 1 . 9 0 . 9 5 0 . 9 5 0 . 4 un i t : m m electrical characteristics at t a =25 cha r a c t e r is tic sy mbol min t y p ma x unit t e s t conditions collector-base breakdow n v o ltage bvcbo 350 v ic= 100ua ie= 0 collector-emitter breakdo w n v o ltage# bvceo 350 v ic= 1ma ib=0 emitter-base breakdow n v o ltage bv ebo 6 v ie= 10ua ic= 0 collector cutof f current icbo 50 na vcb= 250v ie= 0 emitter cutof f current iebo 50 na v eb= 5v ic= 0 dc current gain hfe1 20 vce= 10v ic= 1 ma dc current gain hfe2 30 vce= 10v ic= 10ma dc current gain hfe3 30 200 vce= 10v ic= 30ma dc current gain hfe4 20 200 vce= 10v ic= 50ma dc current gain hfe5 15 vce= 10v ic= 100ma collector-emitter saturation v o ltage vce(sat) 0.3 v ic= 10ma ib= 1 ma collector-emitter saturation v o ltage vce(sat) 0.5 v ic= 30ma ib= 3 ma base-emitter saturation v o ltage vbe(sat) 0.75 v ic= 10ma ib= 1 ma base-emitter saturation v o ltage vbe(sat) 0.9 v ic= 30ma ib= 3 ma base-emitter on v o ltage vbe(on) 2 v vce= 10v ic= 100ma current gain bandw idth product f t 40 200 mhz vce= 20v ic= 10ma f = 20mhz collect base capacitance ccb 6 pf vcb= 20v ie= 0 f= 1mhz emitter base capacitance ceb 80 pf v eb= 0.5v f= 1.00mhz * t o tal device dissipation : fr=1 x 0.75 x 0.062in board,derate 25 . # pulse t e st : pulse w i dth 300us,duty cy cle 2% device marking: mmbt 6517l t = 1z http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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